6/26/2012 apd hybrid series data sheet part description ad50 0 - 9 - 8015 - to5 2 us o rder # 05 - 100 international order # 50 1403 features description applications ? ? 0.50 0 mm active a rea ? low noise ? high gain ? long te rm stability the ad50 0 - 9 - 8015 - to5 2 is a n avalanche photodiode amplifier hybrid containing a 0.196 mm 2 active area apd chip integrated with an internal transimpedance amplifier . hermetically packaged in a to - 5 2 with a flat borosilicate glass window cap. ? pre cision photometry ? analytical instruments ? medical equipment ? low light sensor absolute maximum rating spectral response at m = 100 symbol parameter min max units t stg storage temp - 5 5 +1 25 ? op operating temp 0 +60 ? soldering soldering temp - + 240 ? cc single supply voltage + 4.5 + 11 v i cc supply current - 26 ma electro - optical characteristics @ 2 3 ? c (v cc = single supply +5 v , r l = 5 0 w unless otherwise specifi ed) symbol characteristic test conditions min typ max units ? - 3db frequency response - 3db @ 905 nm --- 100 --- m hz s sensitivity* ? cc supply current dark state --- 25 26 ma * sens itivity = apd responsivity (0.5 8 a/w x 100 gain) x tia gain ( 20 k) these devices are sensitive to electrostatic discharge. please use esd precautions when handling. disclaimer: due to our policy of continued development, specifications are subject to change without notice. schem atic active area: 0.196 mm (500 m diameter) 2 backside view chip dimensions pin 1 5 pl case/gnd pin 5 ?4.70 12.7 ?0.46 5 pl pin circle 1 out- v +v bias cc v out+ v pin 4 pin 3 pin 2 45 ?2.0 min ad 500 ?5.40 2.1 2.95 ?2.54 1.00 sq 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 responsivity (a/w) wavelength (nm) pin 1 c1 c2 +v pin 3 bias pin 2 out+ out- pin 4 case/gnd pin 5 cc (+5v) v ad500-9 h o r s c o m p l i a n t
6/26/2012 avalanch e photodiode data @ 23 ? c symbol characteristic test conditions min typ max units i d dark current m = 100 (see note 2) --- 0.5 5.0 na c capacitance m = 100 (see note 2) --- 1.2 --- pf v br breakdown voltage (see note 1) i d = 2 a 160 240 --- v tempera ture coefficient of v br --- 1.55 --- v/k responsivity m = 100; = 0 v; ? = 905 nm 55 60 --- a/w ? ? 3db bandwidth - 3db --- 0.5 --- ghz t r rise time m = 100 --- 550 --- ps optimum gain 50 60 --- excess noise factor m = 100 --- 2.5 --- excess noise index m = 100 --- 0.2 --- noise current m = 100 --- 1.0 --- pa/hz 1/2 max gain 200 --- --- nep noise equivalent power m = 100; ? = 905 nm --- 2.0 x 10 - 14 --- w/hz 1/2 note 1: the following different breakdown voltage ranges are available: (16 0 C 200 v), (200 C 240 v). note 2: measurement conditions: setup of photo current 1 na at m = 1 and irradiated by a 880 nm, 80 nm bandwidth led. increase the photo current up to 100 na, (m = 100) by internal multiplication due to an increasing bias voltag e. transimpedance amplifier data @ 25 ? c (vcc = +4.5 v to +11v , ta = 0c to 70c, 5 0? load between out+ and out parameter test conditions min typ max units supply voltage +4.5 +5 +11 v supply c urrent -- - 25 26 ma transimpedance diffe rential, measured with 40 a p - p signal 16 2 0 24 k ? ? ? 1/2 small signal bandwidth source capacitance = 1.2 pf, see note 3 180 2 40 --- m hz low frequency cutoff - 3 db, input < 20 a dc --- 5 --- k h z transimpedance linear range peak to peak 0.95 < linearity < 1.05 25 30 --- a p - p power supply rejection ratio (psrr) --- 40 --- db no te 3 : source capacitance for ad5 0 0 - 9 - 8015 - to5 2 is the capacitance of apd. note 4 : input referred noise is calculat ed as rms output noise/ (gain at f = 1 0 0 mhz). noise density is (input referred noise)/ bandwidth. transfer characteristics the circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. the outp ut of the apd (light generated current) is applied to the input of the amplifier. the amplifi er output is in the form of a differential voltage pulsed signal. the apd responsivity curve is provided in fig. 2. the term amps/watt involves the area of the apd and can be expressed as amps/mm 2 /watts/mm 2 , where the numerator applies to the current gene rated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. as an example assume a radiant input of 1 microwatt at 850 nm. the apds c orresponding responsivity is 0.4 a/w. if energy in = 1 w, then the current from the apd = (0.4 a/w) x (1 x 10 - 6 w) = 0.4 a. we can then factor in the typical gain of the apd of 100, making the input current to the amplifier 40 a. application notes the ad50 0 - 9 - 8015 - to5 2 is a high speed optical data receive r. it incorporates an internal transimpedance amplifier with an avalanche photodiode. this detector requires +4.5 v to +11 v voltage supply for the amplifier and a high voltage supply (100 - 240 v) for the apd. the internal apd follows the g ain curve publis hed for the ad50 0 - 9 - to52 - s1 avalanche photodiode. the transimpedance amplifier provides differential output signals in the range of 200 millivolts differential. in order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (fig. 1). however, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. failure to limit this current may result in permanent failure of the device. the suggested initial value for this limiting resistor is 390 kohm. when using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. this includes the use of bypass capacitors, short leads and car eful attention to impedance matching. the large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise.
6/26/2012 fig. 1: apd gain vs bias voltage fig. 2: apd spectral response (m = 1) fig. 3 : amplifier bandwidth vs temperature fig.4 : apd capacitance vs voltage fig. 5: differential gain vs. supply fig. 6: amplifier gain vs. frequency usa first sensor inc. 5700 corsa avenue, #105 westlake village, ca 91362 usa t + 818 706 - 3400 f + 818 889 - 7053 contact.us@first - sensor.com www.first - sensor.com international sales first sensor ag peter - behren s - str. 15 12459 berlin, germany t + 49 30 6399 2399 f + 49 30 639923 - 752 sales.opto@first - sensor.com www.first - sensor.com 180 190 200 210 220 230 240 250 260 1 10 100 1000 applied voltage (v) gain wavelength (nm) a/w 400 0.0 500 600 700 800 900 1000 1100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 200 210 220 230 240 250 260 270 280 290 300 temperature ( oc) bandwidth (mhz) 0 10 20 30 40 50 60 70 80 90 100 40 35 30 25 20 15 10 5 0 breakdown voltage (vbr) junction capacitance (pf) 11.0 v 5.0 v 4.5 v 9.0 gain (db) 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 frequency (hz) 10.0e+6 100.0e+6 1.0e+9 + - 4k in 50 v out 1 10 100 1000 0 5 9 +85oc -40oc and 0oc frequency (mhz) gain (db)
|
